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RP1A090ZP
? Electrical characteristics (Ta = 25 ° C)
　
Data Sheet
Parameter
Gate-source leakage
Symbol
I GSS
Min.
-
Typ.
-
Max.
± 10
Unit
μ A
Conditions
V GS = ± 10V, V DS =0V
Drain-source breakdown voltage V (BR)DSS
? 12
-
-
V
I D = ? 1mA, V GS =0V
Zero gate voltage drain current
Gate threshold voltage
I DSS
V GS (th)
-
? 0.3
-
-
? 1
? 1.0
μ A
V
V DS = ? 12V, V GS =0V
V DS = ? 6V, I D = ? 1mA
-
8
12
I D = ? 9A, V GS = ? 4.5V
Static drain-source on-state
resistance
R DS (on) *
-
-
11
15
16
23
m Ω
I D = ? 4.5A, V GS = ? 2.5V
I D = ? 4.5A, V GS = ? 1.8V
-
19
38
I D = ? 1.8A, V GS = ? 1.5V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
l Y fs l *
C iss
C oss
C rss
t d(on) *
t r *
t d(off) *
t f *
Q g *
Q gs *
Q gd *
12
-
-
-
-
-
-
-
-
-
-
-
7400
800
750
35
120
350
170
59
11
9
-
-
-
-
-
-
-
-
-
-
-
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
I D = ? 9A, V DS = ? 6V
V DS = ? 6V
V GS =0V
f=1MHz
I D = ? 4.5A, V DD ? 6V
V GS = ? 4.5V
R L =1.3 Ω
R G =10 Ω
I D = ? 9A,
V GS = ? 4.5V
V DD ? 6V
*Pulsed
? Body diode characteristics (Source-Drain) (Ta = 25 ° C)
Parameter
Forward Voltage
Symbol
V SD *
Min.
-
Typ.
-
Max.
? 1.2
Unit
V
Conditions
I s = ? 9A, V GS =0V
*Pulsed
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?20 10 ROHM Co., Ltd. All rights reserved.
2/5
2010.07 - Rev.B
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